MRF7S21150HR3 MRF7S21150HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, IDQ
= 1350 mA, 2110-2170 MHz Bandwidth
Video Bandwidth @ 120 W PEP Pout
where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
?
10
?
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout
= 44
W Avg.
GF
?
0.418
?
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout
= 150
W CW
Φ
?
36.5
?
°
Average Group Delay @ Pout
= 150 W CW, f = 2140 MHz
Delay
?
2.82
?
ns
Part-to-Part Insertion Phase Variation @ Pout
= 150 W CW,
f = 2140 MHz, Six Sigma Window
ΔΦ
?
1.45
?
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
?
0.013
?
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
?
0.007
?
dBm/°C
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